参数项参数值
参数项参数值
Collector- Base Voltage VCBO1000 V
Maximum DC Collector Current30 A
Collector- Emitter Voltage VCEO Max450 V
Continuous Collector Current30 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage0.8 V
Width5.15 mm
Length15.75 mm
Height20.15 mm
MXHTS85412101
KRHTS8541299000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
BrandSTMicroelectronics
PackagingTube
CNHTS8541210000
SeriesBUF420AW
Product CategoryBipolar Transistors - BJT
ManufacturerSTMicroelectronics
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
RoHS Details
Factory Pack Quantity600
ImageSTMicroelectronics BUF420AW
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN High Volt Power
Unit Weight0.229281 oz
USHTS8541290095