DMG7N65SCT

厂牌:iscsemi
包装:TUBE 1
类目:元器件 > 分立器件 > MOSFET
编号:B000045671914
描述:
最新价格近期成交45单+
数量价格(含税)
50¥7.0588
1000¥4.7059
库存:1,000交期:5-15days起订:1增量:50
数量:
X
7.0588(单价)
合计:
¥7.06
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current7.7 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time10 ns
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance1.1 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-220-3
PackagingTube
Mounting StyleThrough Hole
Qg - Gate Charge25.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
SubcategoryMOSFETs
Factory Pack Quantity50
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 501V-650V
Channel ModeEnhancement
Fall Time15 ns
USHTS8541290095
Unit Weight0.063493 oz
Pd - Power Dissipation125 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time11 ns