参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current108 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance9.5 mOhms
MXHTS85412999
Qg - Gate Charge58.4 nC
KRHTS8541299000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingTube
TARIC8541290000
Unit Weight0.063493 oz
SeriesDMTH10H010
Pd - Power Dissipation166 W
BrandDiodes Incorporated
ImageDiodes Incorporated DMTH10H010LCT
Product TypeMOSFET
Factory Pack Quantity50
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
DescriptionMOSFET MOSFET BVDSS: 61V-100V