DMG8N65SCT

DMG8N65SCT

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045671955

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current8 A

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time23 ns

MXHTS85412999

CNHTS8541290000

KRHTS8541299000

Rds On - Drain-Source Resistance900 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time115 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Package / CaseTO-220-3

PackagingTube

Mounting StyleThrough Hole

Qg - Gate Charge30 nC

Maximum Operating Temperature+ 150 C

BrandDiodes Incorporated

ManufacturerDiodes Incorporated

TARIC8541290000

SubcategoryMOSFETs

ImageDiodes Incorporated DMG8N65SCT

Factory Pack Quantity50

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET MOSFET BVDSS: 501V-650V

Channel ModeEnhancement

Fall Time52 ns

USHTS8541290095

Unit Weight0.063493 oz

Pd - Power Dissipation125 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time46 ns