参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current205 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13.4 ns
Rds On - Drain-Source Resistance3 MOhms
Typical Turn-Off Delay Time34.4 ns
Package / CaseTO-220-3
PackagingTube
Mounting StyleThrough Hole
Qg - Gate Charge75.6 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMT4003SCT
Factory Pack Quantity50
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 31V-40V
Channel ModeEnhancement
Fall Time15.8 ns
USHTS8541290095
Unit Weight0.079014 oz
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time41.2 ns