DMN90H8D5HCTI

DMN90H8D5HCTI

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672001

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current2.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

CNHTS8541290000

Typical Turn-On Delay Time16 ns

MXHTS85412999

Rds On - Drain-Source Resistance5.5 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time17.6 ns

KRHTS8541299000

Minimum Operating Temperature- 55 C

JPHTS8541290100

Mounting StyleThrough Hole

Package / CaseITO-220AB-3

Maximum Operating Temperature+ 150 C

CAHTS8541290000

PackagingTube

BrandDiodes Incorporated

TARIC8541290000

ManufacturerDiodes Incorporated

Factory Pack Quantity50

ImageDiodes Incorporated DMN90H8D5HCTI

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET MOSFETBVDSS: >800V

Product TypeMOSFET

SubcategoryMOSFETs

Channel ModeEnhancement

USHTS8541290095

Fall Time17 ns

Unit Weight0.065257 oz

Pd - Power Dissipation30 W

Vds - Drain-Source Breakdown Voltage900 V

Number of Channels1 Channel

Rise Time21 ns