DMG3N60SJ3

DMG3N60SJ3

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672018

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current2.8 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

CNHTS8541290000

Typical Turn-On Delay Time10.6 ns

MXHTS85412999

Rds On - Drain-Source Resistance3.5 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time34 ns

KRHTS8541299000

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Mounting StyleThrough Hole

Package / CaseTO-251-3

Maximum Operating Temperature+ 150 C

PackagingTube

Qg - Gate Charge12.6 nC

BrandDiodes Incorporated

TARIC8541290000

ManufacturerDiodes Incorporated

Factory Pack Quantity75

ImageDiodes Incorporated DMG3N60SJ3

Product CategoryMOSFET

DescriptionMOSFET MOSFET BVDSS: 501V-650V

Product TypeMOSFET

SubcategoryMOSFETs

Channel ModeEnhancement

USHTS8541290095

Fall Time28 ns

Unit Weight0.011993 oz

Pd - Power Dissipation41 W

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time22 ns