DMN80H2D0SCTI

DMN80H2D0SCTI

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672126

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

MXHTS85412999

Typical Turn-On Delay Time20.5 ns

KRHTS8541299000

Rds On - Drain-Source Resistance1.4 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time104 ns

CNHTS8541290000

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Package / CaseITO-220AB-3

Mounting StyleThrough Hole

Qg - Gate Charge35.4 nC

Maximum Operating Temperature+ 150 C

PackagingTube

BrandDiodes Incorporated

Factory Pack Quantity50

Product CategoryMOSFET

ImageDiodes Incorporated DMN80H2D0SCTI

TARIC8541290000

RoHS Details

Product TypeMOSFET

ManufacturerDiodes Incorporated

DescriptionMOSFET MOSFETBVDSS: 651V-800V

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time42.6 ns

Unit Weight0.065257 oz

USHTS8541290095

Pd - Power Dissipation41 W

Vds - Drain-Source Breakdown Voltage800 V

Number of Channels1 Channel

Rise Time35.8 ns