FCH170N60

FCH170N60

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672317

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min17 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.5 V

TechnologySi

Id - Continuous Drain Current22 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time21 ns

Rds On - Drain-Source Resistance170 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time55 ns

Width4.82 mm

Length15.87 mm

Height20.82 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge42 nC

Package / CaseTO-247-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

BrandON Semiconductor / Fairchild

PackagingTube

CNHTS8541290000

SeriesFCH170N60

ManufacturerON Semiconductor

Product CategoryMOSFET

Product TypeMOSFET

TARIC8541290000

Channel ModeEnhancement

RoHS Details

Factory Pack Quantity450

Fall Time3.8 ns

ImageON Semiconductor / Fairchild FCH170N60

SubcategoryMOSFETs

DescriptionMOSFET SuperFET2 600V, 170mohm

Unit Weight0.225401 oz

USHTS8541290095

Pd - Power Dissipation227 W

TradenameSuperFET II

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time12 ns