FCP099N65S3

FCP099N65S3

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672337

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min19 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current30 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time23 ns

Rds On - Drain-Source Resistance79 mOhms

Transistor Type1 N-Channel

MXHTS85412999

Qg - Gate Charge61 nC

KRHTS8541299000

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

CNHTS8541290000

Channel ModeEnhancement

Fall Time5 ns

PackagingTube

TARIC8541290000

RoHS Details

Unit Weight0.063493 oz

SeriesFCP099N65S3

ImageON Semiconductor / Fairchild FCP099N65S3

BrandON Semiconductor / Fairchild

Pd - Power Dissipation227 W

ManufacturerON Semiconductor

Factory Pack Quantity800

Product TypeMOSFET

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET SuperFET3 650V 99 mOhm,TO220 PKG

USHTS8541290095

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time24 ns