FCD1300N80Z

FCD1300N80Z

厂牌：iscsemi

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672348

描述：国产品牌，原厂价格

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min4.5 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4.5 V

TechnologySi

Id - Continuous Drain Current4 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time14 ns

Rds On - Drain-Source Resistance1.3 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time33 ns

Width6.22 mm

Length6.73 mm

MXHTS85412999

Qg - Gate Charge16.2 nC

KRHTS8541299000

Package / CaseTO-252-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

CNHTS8541290000

Channel ModeEnhancement

Fall Time6 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

Unit Weight0.009184 oz

SeriesFCD1300N80Z

BrandON Semiconductor / Fairchild

ImageON Semiconductor / Fairchild FCD1300N80Z

Pd - Power Dissipation52 W

Product CategoryMOSFET

ManufacturerON Semiconductor

SubcategoryMOSFETs

Factory Pack Quantity2500

Product TypeMOSFET

USHTS8541290095

Vds - Drain-Source Breakdown Voltage800 V

DescriptionMOSFET N-Channel SuperFET<sup></sup> II MOSFET

TradenameSuperFET II

Number of Channels1 Channel

Rise Time8.3 ns