FCPF2250N80Z

FCPF2250N80Z

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672371

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min2.28 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4.5 V

TechnologySi

Id - Continuous Drain Current2.6 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time11 ns

Rds On - Drain-Source Resistance2.25 Ohms

Typical Turn-Off Delay Time26 ns

Length10.36 mm

Height16.07 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge14 nC

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingTube

BrandON Semiconductor / Fairchild

CNHTS8541290000

ManufacturerON Semiconductor

Product CategoryMOSFET

Factory Pack Quantity1000

SeriesFCPF2250N80Z

TARIC8541290000

Product TypeMOSFET

Channel ModeEnhancement

RoHS Details

Fall Time8.7 ns

ImageON Semiconductor / Fairchild FCPF2250N80Z

DescriptionMOSFET N-Channel SuperFET<sup></sup> II MOSFET 800 V, 2.6 A, 2.25 O

SubcategoryMOSFETs

Unit Weight0.080072 oz

USHTS8541290095

Pd - Power Dissipation21.9 W

TradenameSuperFET II

Vds - Drain-Source Breakdown Voltage800 V

Number of Channels1 Channel

Rise Time6.7 ns