FCH070N60E

FCH070N60E

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672376

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current52 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time29 ns

Rds On - Drain-Source Resistance70 mOhms

Width4.82 mm

Typical Turn-Off Delay Time122 ns

Length15.87 mm

Height20.82 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge128 nC

Package / CaseTO-247-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingTube

BrandON Semiconductor / Fairchild

CNHTS8541290000

ManufacturerON Semiconductor

Product CategoryMOSFET

Factory Pack Quantity450

TARIC8541290000

SeriesFCH070N60E

Product TypeMOSFET

RoHS Details

Channel ModeEnhancement

Fall Time28 ns

ImageON Semiconductor / Fairchild FCH070N60E

DescriptionMOSFET N-Channel SuperFET<sup></sup> II Easy-Drive MOSFET

SubcategoryMOSFETs

Unit Weight0.225401 oz

USHTS8541290095

Pd - Power Dissipation481 W

TradenameSuperFET II

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time28 ns