参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current24 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height16.07 mm
Rds On - Drain-Source Resistance150 mOhms
MXHTS85411001
Length10.36 mm
KRHTS8541109000
JPHTS8541100901
CAHTS8541100090
Qg - Gate Charge94 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ImageON Semiconductor / Fairchild FCPF150N65F
TARIC8541100000
PackagingTube
RoHS Details
Channel ModeEnhancement
SeriesFCPF150N65F
Factory Pack Quantity1000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandON Semiconductor / Fairchild
Unit Weight0.080072 oz
Product TypeMOSFET
DescriptionMOSFET SuperFET2 150 mOhm 650V FRFET
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation39 W
Number of Channels1 Channel