FCP190N65S3

FCP190N65S3

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672381

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min10 s

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current17 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time20 ns

Rds On - Drain-Source Resistance159 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time57 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge33 nC

Mounting StyleThrough Hole

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingTube

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity800

BrandON Semiconductor

SeriesFCP190N65S3

Product TypeMOSFET

Channel ModeEnhancement

DescriptionMOSFET SuperFET3 650V 190 mOhm, TO220F PKG

ManufacturerON Semiconductor

TARIC8541290000

ImageON Semiconductor FCP190N65S3

Product CategoryMOSFET

Fall Time16 ns

RoHS Details

Unit Weight0.063493 oz

SubcategoryMOSFETs

Pd - Power Dissipation144 W

USHTS8541290095

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time22 ns