FCP125N60E

FCP125N60E

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672388

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min25 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current29 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time23 ns

Rds On - Drain-Source Resistance125 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time106 ns

Width4.7 mm

Height16.3 mm

Length10.67 mm

MXHTS85412999

Qg - Gate Charge75 nC

KRHTS8541299000

Package / CaseTO-220-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

JPHTS8541290100

Minimum Operating Temperature- 55 C

CNHTS8541290000

CAHTS8541290000

Channel ModeEnhancement

Fall Time23 ns

PackagingTube

TARIC8541290000

Unit Weight0.063493 oz

BrandON Semiconductor / Fairchild

RoHS Details

SeriesFCP125N60E

Factory Pack Quantity800

ImageON Semiconductor / Fairchild FCP125N60E

Pd - Power Dissipation278 W

Product CategoryMOSFET

ManufacturerON Semiconductor

SubcategoryMOSFETs

Product TypeMOSFET

USHTS8541290095

Vds - Drain-Source Breakdown Voltage600 V

DescriptionMOSFET 600V 29A N-Chnl SuperFET Easy-Drive

TradenameSuperFET II

Number of Channels1 Channel

Rise Time20 ns