FCPF380N60

FCPF380N60

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672389

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current10.2 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Rds On - Drain-Source Resistance380 mOhms

Transistor Type1 N-Channel

Height16.07 mm

Length10.36 mm

MXHTS85412999

Qg - Gate Charge40 nC

KRHTS8541299000

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

CNHTS8541210000

PackagingTube

Unit Weight0.080072 oz

ImageON Semiconductor / Fairchild FCPF380N60

TARIC8541290000

Pd - Power Dissipation31 W

RoHS Details

Factory Pack Quantity1000

SeriesFCPF380N60

BrandON Semiconductor / Fairchild

ManufacturerON Semiconductor

Product CategoryMOSFET

Vds - Drain-Source Breakdown Voltage650 V

Product TypeMOSFET

DescriptionMOSFET SuperFET2, 380mohm

Number of Channels1 Channel

TradenameSuperFET II

SubcategoryMOSFETs

USHTS8541290095