FDP2D3N10C

FDP2D3N10C

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672392

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min222 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current222 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time42 ns

Rds On - Drain-Source Resistance2.1 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time74 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge152 nC

Mounting StyleThrough Hole

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

PackagingTube

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity800

BrandON Semiconductor / Fairchild

SeriesFDP2D3N10C

Product TypeMOSFET

DescriptionMOSFET PTNG 100/20V inTO220 3L JEDEC GREEN EMC

Channel ModeEnhancement

ImageON Semiconductor / Fairchild FDP2D3N10C

TARIC8541290000

ManufacturerON Semiconductor

Fall Time32 ns

Product CategoryMOSFET

RoHS Details

Unit Weight0.063493 oz

SubcategoryMOSFETs

Pd - Power Dissipation214 W

USHTS8541290095

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time35 ns