FCP170N60

FCP170N60

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672393

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min17 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.5 V

TechnologySi

Id - Continuous Drain Current22 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time21 ns

Rds On - Drain-Source Resistance170 mOhms

Width4.7 mm

Transistor Type1 N-Channel

Typical Turn-Off Delay Time55 ns

Length10.67 mm

Height16.3 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge42 nC

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingTube

BrandON Semiconductor / Fairchild

CNHTS8541290000

ManufacturerON Semiconductor

Product CategoryMOSFET

Factory Pack Quantity800

TARIC8541290000

SeriesFCP170N60

Product TypeMOSFET

RoHS Details

Channel ModeEnhancement

Fall Time3.8 ns

ImageON Semiconductor / Fairchild FCP170N60

DescriptionMOSFET N-Channel SuperFET<sup></sup> II MOSFET 600 V, 22 A, 170 mO

SubcategoryMOSFETs

Unit Weight0.063493 oz

USHTS8541290095

Pd - Power Dissipation227 W

TradenameSuperFET II

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time12 ns