FCP190N65F

FCP190N65F

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672396

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min18 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage5 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current20.6 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time25 ns

Width4.7 mm

Rds On - Drain-Source Resistance190 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time62 ns

Height16.3 mm

Length10.67 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleThrough Hole

Qg - Gate Charge60 nC

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

RoHS Details

PackagingTube

ImageON Semiconductor / Fairchild FCP190N65F

SubcategoryMOSFETs

Channel ModeEnhancement

BrandON Semiconductor / Fairchild

Fall Time4.2 ns

ManufacturerON Semiconductor

SeriesFCP190N65F

Factory Pack Quantity800

Product TypeMOSFET

Unit Weight0.063493 oz

USHTS8541290095

Product CategoryMOSFET

DescriptionMOSFET SF2 650V 190MOHM F TO220

Pd - Power Dissipation208 W

TradenameSuperFET II FRFET

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time11 ns