FDP100N10

FDP100N10

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672403

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current75 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time70 ns

Rds On - Drain-Source Resistance10 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time125 ns

Width4.7 mm

Height16.3 mm

Length10.67 mm

MXHTS85412999

Qg - Gate Charge100 nC

KRHTS8541299000

Package / CaseTO-220-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 175 C

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

CNHTS8541290000

Channel ModeEnhancement

Fall Time115 ns

PackagingTube

TARIC8541290000

RoHS Details

Unit Weight0.063493 oz

BrandON Semiconductor / Fairchild

SeriesFDP100N10

Factory Pack Quantity800

ImageON Semiconductor / Fairchild FDP100N10

Pd - Power Dissipation208 W

Product CategoryMOSFET

ManufacturerON Semiconductor

SubcategoryMOSFETs

Product TypeMOSFET

USHTS8541290095

Vds - Drain-Source Breakdown Voltage100 V

DescriptionMOSFET 100V N-Channel PowerTrench

TradenamePowerTrench

Number of Channels1 Channel

Rise Time265 ns