参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time80 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time112 ns
Width4.7 mm
Height16.3 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time154 ns
PackagingTube
TARIC8541290000
Unit Weight0.063493 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDP2710
Factory Pack Quantity800
ImageON Semiconductor / Fairchild FDP2710
Pd - Power Dissipation260 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage250 V
DescriptionMOSFET 250V N-Channel PowerTrench
TradenamePowerTrench
Number of Channels1 Channel
Rise Time252 ns