FDPF085N10A

FDPF085N10A

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672409

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min76 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current40 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Transistor Type1 N-Channel

Height16.07 mm

Length10.36 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleThrough Hole

Qg - Gate Charge31 nC

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

CNHTS8541210000

TARIC8541290000

RoHS Details

PackagingTube

SubcategoryMOSFETs

ImageON Semiconductor / Fairchild FDPF085N10A

Channel ModeEnhancement

BrandON Semiconductor / Fairchild

Fall Time8 ns

SeriesFDPF085N10A

Product TypeMOSFET

Factory Pack Quantity1000

ManufacturerON Semiconductor

Unit Weight0.080072 oz

USHTS8541290095

Product CategoryMOSFET

DescriptionMOSFET 100V N-Channel PowerTrench MOSFET

Pd - Power Dissipation33.3 W

TradenamePowerTrench

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time22 ns