FDP4D5N10C

FDP4D5N10C

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672412

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min134 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time29 ns

Rds On - Drain-Source Resistance4.5 mOhms

Typical Turn-Off Delay Time41 ns

MXHTS85412999

Qg - Gate Charge68 nC

Mounting StyleThrough Hole

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

PackagingTube

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity800

BrandON Semiconductor

Product TypeMOSFET

Channel ModeEnhancement

DescriptionMOSFET FET 100V 128A 4.5 mOhm

ManufacturerON Semiconductor

TARIC8541290000

ImageON Semiconductor FDP4D5N10C

Product CategoryMOSFET

Fall Time13 ns

RoHS Details

Unit Weight0.071613 oz

SubcategoryMOSFETs

Pd - Power Dissipation150 W

USHTS8541290095

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time49 ns