FDP8D5N10C

FDP8D5N10C

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672420

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min68 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

Id - Continuous Drain Current76 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time12 ns

Rds On - Drain-Source Resistance8.5 mOhms

Typical Turn-Off Delay Time18 ns

MXHTS85412999

Qg - Gate Charge34 nC

Package / CaseTO-220-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 175 C

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

CNHTS8541290000

Channel ModeEnhancement

Fall Time4 ns

PackagingTube

TARIC8541290000

RoHS Details

ImageON Semiconductor FDP8D5N10C

BrandON Semiconductor

ManufacturerON Semiconductor

Pd - Power Dissipation107 W

Product TypeMOSFET

Factory Pack Quantity800

Product CategoryMOSFET

SubcategoryMOSFETs

USHTS8541290095

DescriptionMOSFET FET 100V 76A 8.5 mOhm

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time11 ns