参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current54 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance11.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time47 ns
Width4.7 mm
Height16.3 mm
Length10.67 mm
MXHTS85412999
Qg - Gate Charge29 nC
KRHTS8541299000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time51 ns
CNHTS8541409000
PackagingTube
Unit Weight0.063493 oz
ImageON Semiconductor / Fairchild FDP8880
TARIC8541290000
Pd - Power Dissipation55 W
RoHS Details
Part # AliasesFDP8880_NL
Factory Pack Quantity800
SeriesFDP8880
ManufacturerON Semiconductor
BrandON Semiconductor / Fairchild
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
TradenamePowerTrench
Number of Channels1 Channel
DescriptionMOSFET 30V N-Channel PowerTrench MOSFET
SubcategoryMOSFETs
Rise Time107 ns
USHTS8541290095