FDPF4D5N10C

FDPF4D5N10C

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045672440

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min134 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time29 ns

Rds On - Drain-Source Resistance4.5 mOhms

Typical Turn-Off Delay Time41 ns

MXHTS85412999

Qg - Gate Charge68 nC

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

Maximum Operating Temperature+ 175 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

CNHTS8541290000

Channel ModeEnhancement

Fall Time13 ns

PackagingTube

TARIC8541290000

RoHS Details

Unit Weight0.074511 oz

ImageON Semiconductor FDPF4D5N10C

BrandON Semiconductor

Pd - Power Dissipation37.5 W

ManufacturerON Semiconductor

Factory Pack Quantity1000

Product TypeMOSFET

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET FET 100V 128A 4.5 mOhm

USHTS8541290095

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time49 ns