参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current79 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time39 ns
Width4.7 mm
Height16.3 mm
Length10.67 mm
MXHTS85412999
Qg - Gate Charge107 nC
KRHTS8541299000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time17 ns
PackagingTube
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.063493 oz
RoHS Details
SeriesFDP2532
Factory Pack Quantity800
Pd - Power Dissipation310 W
Product CategoryMOSFET
Part # AliasesFDP2532_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET 150V NCh UltraFET Power Trench
TradenamePowerTrench
Number of Channels1 Channel
Rise Time30 ns
TypeMOSFET