参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current80 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time35 ns
Width4.7 mm
Rds On - Drain-Source Resistance2.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time64 ns
Height16.3 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge222 nC
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541210000
TARIC8541290000
RoHS Details
PackagingTube
ImageON Semiconductor / Fairchild FDP8860
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time59 ns
ManufacturerON Semiconductor
SeriesFDP8860
Factory Pack Quantity800
Product TypeMOSFET
Unit Weight0.063493 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET 30V N-Channel PowerTrench MOSFET
Pd - Power Dissipation254 W
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time135 ns