参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current23.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12.5 ns
Rds On - Drain-Source Resistance144 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Width4.85 mm
MXHTS85412999
Height16.15 mm
Length10.65 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge44 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time5.8 ns
TARIC8541290000
PackagingTube
BrandInfineon Technologies
RoHS Details
ImageInfineon Technologies IPA60R160P6
Product CategoryMOSFET
SeriesCoolMOS P6
Unit Weight0.211644 oz
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity500
Product TypeMOSFET
Pd - Power Dissipation34 W
Part # AliasesSP001017082 IPA60R160P6XKSA1
USHTS8541290095
DescriptionMOSFET N-Ch 600V 10.4A TO220FP-3
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7.6 nS