参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Width4.85 mm
Rds On - Drain-Source Resistance270 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Height16.15 mm
Length10.65 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge29 nC
Package / CaseTO-220FP-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingTube
TARIC8541290000
ImageInfineon Technologies IPA60R299CP
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time5 ns
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS CE
Factory Pack Quantity500
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
Part # AliasesIPA6R299CPXK SP000096438 IPA60R299CPXKSA1
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time5 ns