参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current13.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Width4.85 mm
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time71 ns
Height16.15 mm
Length10.65 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge43 nC
Package / CaseTO-220FP-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingTube
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPA60R280E6
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time9 ns
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS E6
Factory Pack Quantity500
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET N-Ch 650V 13.8A TO220FP-3 CoolMOS E6
Pd - Power Dissipation32 W
Part # AliasesSP000797292 IPA6R28E6XK IPA60R280E6XKSA1
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time9 ns