IPA50R800CE

IPA50R800CE

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673018

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current7.6 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6.2 ns

Width4.85 mm

Height16.15 mm

Rds On - Drain-Source Resistance720 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time26 ns

MXHTS85412999

Length10.65 mm

KRHTS8541299000

Qg - Gate Charge12.4 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseTO-220-3

Mounting StyleThrough Hole

Minimum Operating Temperature- 40 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingTube

RoHS Details

ImageInfineon Technologies IPA50R800CE

Channel ModeEnhancement

SeriesCoolMOS CE

SubcategoryMOSFETs

Fall Time15.9 ns

BrandInfineon Technologies

Factory Pack Quantity500

Unit Weight0.068784 oz

Product TypeMOSFET

Product CategoryMOSFET

DescriptionMOSFET CONSUMER

ManufacturerInfineon

USHTS8541290095

Part # AliasesSP001217234 IPA50R800CEXKSA2

Pd - Power Dissipation26.4 W

Vds - Drain-Source Breakdown Voltage500 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time5.5 ns