IPA65R190C7

IPA65R190C7

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673036

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current8 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time11 ns

Width4.85 mm

Height16.15 mm

Rds On - Drain-Source Resistance168 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time54 ns

MXHTS85412999

Length10.65 mm

KRHTS8541299000

Qg - Gate Charge23 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseTO-220-3

Minimum Operating Temperature- 55 C

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingTube

RoHS Details

ImageInfineon Technologies IPA65R190C7

Channel ModeEnhancement

SeriesCoolMOS C7

SubcategoryMOSFETs

Fall Time9 ns

BrandInfineon Technologies

Factory Pack Quantity500

Unit Weight0.090478 oz

Product CategoryMOSFET

Product TypeMOSFET

ManufacturerInfineon

DescriptionMOSFET HIGH POWER BEST IN CLASS

USHTS8541290095

Pd - Power Dissipation30 W

Part # AliasesSP001080140 IPA65R190C7XKSA1

Vds - Drain-Source Breakdown Voltage650 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time11 ns