参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current4.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Width4.85 mm
Height16.15 mm
Rds On - Drain-Source Resistance860 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length10.65 mm
KRHTS8541299000
Qg - Gate Charge13 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingTube
TARIC8541290000
ImageInfineon Technologies IPA60R950C6
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
SeriesCoolMOS C6
Fall Time13 ns
BrandInfineon Technologies
Factory Pack Quantity500
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation26 W
Part # AliasesSP000629360 IPA6R95C6XK IPA60R950C6XKSA1
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time8 ns