参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current11.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance280 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Width9.25 mm
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge41 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time7 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon Technologies IPB65R310CFD
RoHS Details
Unit Weight0.139332 oz
SeriesCoolMOS CFD2
Factory Pack Quantity1000
Pd - Power Dissipation104.2 W
Product TypeMOSFET
BrandInfineon Technologies
Part # AliasesSP000745032 IPB65R31CFDXT IPB65R310CFDATMA1
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290095
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7.5 ns