参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current13.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Width9.25 mm
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge43 nC
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPB60R280C6
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time12 ns
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS C6
Factory Pack Quantity1000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation104 W
Part # AliasesIPB6R28C6XT SP000687550 IPB60R280C6ATMA1
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time11 ns
Type600 V CoolMOS C6 Power Transistor