参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Width4.85 mm
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Height16.15 mm
Length10.65 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge70 nC
Package / CaseTO-220FP-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingTube
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPA60R125CP
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time5 ns
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS CE
Factory Pack Quantity500
Product CategoryMOSFET
Unit Weight0.211644 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP
Pd - Power Dissipation35 W
Part # AliasesSP000095275 IPA6R125CPXK IPA60R125CPXKSA1
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time5 ns