参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current23.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Width9.25 mm
Height4.4 mm
Rds On - Drain-Source Resistance140 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time96 ns
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge75 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageInfineon Technologies IPB60R160C6
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time8 ns
Factory Pack Quantity1000
SeriesCoolMOS C6
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon Technologies
Unit Weight0.139332 oz
DescriptionMOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
Product TypeMOSFET
ManufacturerInfineon
USHTS8541290095
Part # AliasesSP000687552 IPB6R16C6XT IPB60R160C6ATMA1
Pd - Power Dissipation176 W
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time13 ns