IPB107N20NA

IPB107N20NA

厂牌：iscsemi

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673256

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current88 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time18 ns

Width9.25 mm

Rds On - Drain-Source Resistance9.6 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time41 ns

Height4.4 mm

Length10 mm

Qg - Gate Charge87 nC

Mounting StyleSMD/SMT

Package / CaseTO-263-3

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingReel

PackagingMouseReel

BrandInfineon Technologies

Factory Pack Quantity1000

ManufacturerInfineon

Channel ModeEnhancement

SeriesOptiMOS 3

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET N-Ch 200V 88A D2PAK-2

Fall Time11 ns

Product TypeMOSFET

SubcategoryMOSFETs

Unit Weight0.077603 oz

Part # AliasesSP000877674 IPB17N2NAXT IPB107N20NAATMA1

Pd - Power Dissipation300 W

TradenameOptiMOS

Vds - Drain-Source Breakdown Voltage200 V

Number of Channels1 Channel

Rise Time26 ns