参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current7.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance540 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
Width4.85 mm
Height16.15 mm
Length10.65 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge12 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time14 ns
PackagingTube
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPA60R600P6
Unit Weight0.211644 oz
SeriesCoolMOS P6
Factory Pack Quantity500
BrandInfineon Technologies
Pd - Power Dissipation28 W
Product TypeMOSFET
Part # AliasesSP001017070 IPA60R600P6XKSA1
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET LOW POWER_PRC/PRFRM
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7 ns