IPD65R225C7

IPD65R225C7

厂牌：iscsemi

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673303

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

TechnologySi

Id - Continuous Drain Current11 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time9 ns

Rds On - Drain-Source Resistance225 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time48 ns

Width6.22 mm

Height2.3 mm

Length6.5 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge20 nC

Package / CaseTO-252-3

Mounting StyleSMD/SMT

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Channel ModeEnhancement

CNHTS8541290000

Fall Time10 ns

PackagingReel

PackagingCut Tape

PackagingMouseReel

TARIC8541290000

ImageInfineon Technologies IPD65R225C7

RoHS Details

Unit Weight0.139332 oz

SeriesCoolMOS C7

Factory Pack Quantity2500

Product TypeMOSFET

BrandInfineon Technologies

Part # AliasesSP000929430 IPD65R225C7ATMA1

Product CategoryMOSFET

ManufacturerInfineon

SubcategoryMOSFETs

DescriptionMOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7

Vds - Drain-Source Breakdown Voltage650 V

USHTS8541290095

TradenameCoolMOS

Number of Channels1 Channel

Rise Time6 ns