IPB65R110CFD

厂牌：iscsemi

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673320

描述：

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.5 V

TechnologySi

Id - Continuous Drain Current31.2 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time16 ns

Rds On - Drain-Source Resistance99 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time68 ns

Width9.25 mm

Height4.4 mm

MXHTS85412999

Length10 mm

CNHTS8541290000

KRHTS8541299000

Qg - Gate Charge118 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time6 ns

TARIC8541290000

PackagingReel

PackagingMouseReel

PackagingCut Tape

BrandInfineon Technologies

RoHS Details

Product CategoryMOSFET

ImageInfineon Technologies IPB65R110CFD

SeriesCoolMOS CFD2

Unit Weight0.139332 oz

SubcategoryMOSFETs

Factory Pack Quantity1000

ManufacturerInfineon

Product TypeMOSFET

Pd - Power Dissipation277.8 W

Part # AliasesSP000896400 IPB65R11CFDXT IPB65R110CFDATMA1

USHTS8541290095

DescriptionMOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2

Vds - Drain-Source Breakdown Voltage650 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time11 ns