参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current8.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance420 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Width6.22 mm
MXHTS85412999
Height2.3 mm
Length6.5 mm
CNHTS8541290000
Qg - Gate Charge32 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time8 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandInfineon Technologies
SeriesCoolMOS CFD2
RoHS Details
ImageInfineon Technologies IPD65R420CFD
Product CategoryMOSFET
Unit Weight0.139332 oz
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation83.3 W
Part # AliasesSP000891704 IPD65R42CFDXT IPD65R420CFDBTMA1
USHTS8541290095
DescriptionMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
Vds - Drain-Source Breakdown Voltage650 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7 ns