IRF200B211

IRF200B211

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673885

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min13 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current12 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6.5 ns

Width4.4 mm

Height15.65 mm

Rds On - Drain-Source Resistance170 mOhms

MXHTS85412999

Length10 mm

KRHTS8541299000

Qg - Gate Charge15.3 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseTO-220-3

Mounting StyleThrough Hole

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

CNHTS8541290000

TARIC8541290000

PackagingTube

ImageInfineon / IR IRF200B211

RoHS Details

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time6.5 ns

BrandInfineon / IR

Factory Pack Quantity1000

Unit Weight0.081130 oz

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET TRENCH >=100V

ManufacturerInfineon

USHTS8541290095

Pd - Power Dissipation80 W

Vds - Drain-Source Breakdown Voltage200 V

TradenameStrongIRFET

Number of Channels1 Channel

Rise Time9.5 ns