IPW60R041P6

IPW60R041P6

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673898

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.5 V

TechnologySi

Id - Continuous Drain Current77.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time29 ns

Width5.21 mm

Height21.1 mm

Rds On - Drain-Source Resistance37 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time90 ns

MXHTS85412999

Length16.13 mm

KRHTS8541299000

Qg - Gate Charge170 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseTO-247-3

Mounting StyleThrough Hole

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingTube

RoHS Details

ImageInfineon Technologies IPW60R041P6

Channel ModeEnhancement

SeriesCoolMOS P6

SubcategoryMOSFETs

Fall Time5 ns

BrandInfineon Technologies

Factory Pack Quantity240

Unit Weight1.340411 oz

Product TypeMOSFET

Product CategoryMOSFET

DescriptionMOSFET HIGH POWER PRICE/PERFORM

ManufacturerInfineon

USHTS8541290095

Part # AliasesSP001091630 IPW60R041P6FKSA1

Pd - Power Dissipation481 W

Vds - Drain-Source Breakdown Voltage600 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time27 ns