参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current13.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Width5.21 mm
Rds On - Drain-Source Resistance252 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Height21.1 mm
Length16.13 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge25.5 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity240
CNHTS8541290000
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS P6
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET N-Ch 600V 13.8A TO247-3
ImageInfineon Technologies IPW60R280P6
Fall Time6 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight1.340411 oz
Part # AliasesSP001017086 IPW60R280P6FKSA1
USHTS8541290095
Pd - Power Dissipation104 W
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time6 ns