IPW60R099C6

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673942

描述：

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current37.9 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time15 ns

Width5.21 mm

Height21.1 mm

Rds On - Drain-Source Resistance90 mOhms

Transistor Type1 N-Channel

MXHTS85412999

Length16.13 mm

KRHTS8541299000

Qg - Gate Charge119 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseTO-247-3

Mounting StyleThrough Hole

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingTube

TARIC8541290000

ImageInfineon Technologies IPW60R099C6

RoHS Details

Channel ModeEnhancement

SeriesCoolMOS C6

SubcategoryMOSFETs

Fall Time6 ns

BrandInfineon Technologies

Factory Pack Quantity240

Unit Weight1.340411 oz

Product CategoryMOSFET

Product TypeMOSFET

ManufacturerInfineon

DescriptionMOSFET N-Ch 650V 38A TO247-3 CoolMOS C6

USHTS8541290095

Pd - Power Dissipation278 W

Part # AliasesIPW6R99C6XK SP000641908 IPW60R099C6FKSA1

Vds - Drain-Source Breakdown Voltage600 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time12 ns