IPW60R099CP

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673950

描述：

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current31 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10 ns

Width5.21 mm

Rds On - Drain-Source Resistance90 mOhms

Transistor Type1 N-Channel

Height21.1 mm

Length16.13 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleThrough Hole

Qg - Gate Charge80 nC

Package / CaseTO-247-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541210000

TARIC8541290000

PackagingTube

RoHS Details

ImageInfineon Technologies IPW60R099CP

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time5 ns

BrandInfineon Technologies

ManufacturerInfineon

SeriesCoolMOS CE

Factory Pack Quantity240

Product CategoryMOSFET

Unit Weight1.340411 oz

Product TypeMOSFET

USHTS8541290095

DescriptionMOSFET N-Ch 600V 31A TO247-3 CoolMOS CP

Pd - Power Dissipation255 W

Part # AliasesIPW6R99CPXK SP000067147 IPW60R099CPFKSA1

Vds - Drain-Source Breakdown Voltage600 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time5 ns