IRF250P224

IRF250P224

厂牌：iscsemi

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045673964

描述：

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min112 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current96 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time25 ns

Rds On - Drain-Source Resistance12 mOhms

MXHTS85412999

Transistor Type1 N-Channel

Typical Turn-Off Delay Time77 ns

KRHTS8541299000

Qg - Gate Charge203 nC

CNHTS8541290000

Package / CaseTO-247-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

Channel ModeEnhancement

PackagingTube

Fall Time58 ns

TARIC8541290000

RoHS Details

ImageInfineon Technologies IRF250P224

Factory Pack Quantity400

BrandInfineon Technologies

Product TypeMOSFET

Unit Weight0.211644 oz

ManufacturerInfineon

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET IFX OPTIMOS

Pd - Power Dissipation313 W

USHTS8541290095

Vds - Drain-Source Breakdown Voltage250 V

TradenameStrongIRFET

Number of Channels1 Channel

Rise Time70 ns